Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
Junction temperature induced thermal snapback breakdown of MOSFET device | Semantic Scholar
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02 ESD basics_survey by Swetha | PPT
Figure 4 from Snapback Breakdown Dynamics and ESD Susceptibility of LDMOS | Semantic Scholar
PDF) Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration | Ming-dou Ker - Academia.edu
2 Snap-back I-V characteristic of common ESD device. | Download Scientific Diagram
Figure 3 from Snapback Breakdown Dynamics and ESD Susceptibility of LDMOS | Semantic Scholar
A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design<xref rid="cpb_27_8_088501_fn1" ref-type="fn">*</xref><fn id="cpb_27_8_088501_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant ...
The Impact of CMOS technology scaling on MOSFETs second breakdown: Evaluation of ESD robustness
반도체 공학 11-11 Snapback Breakdown - YouTube
Typical snapback curve of gate-source diode of InP HEMT with pulse... | Download Scientific Diagram
ESD Device Modeling: Part 1 - In Compliance Magazine
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
Snapback behavior determines ESD protection effectiveness - SemiWiki
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parasitic BJT(기생 BJT; snapback, latch up) : 네이버 블로그
TVS Diodes | mbedded.ninja
Figure 1 from Snapback Breakdown Dynamics and ESD Susceptibility of LDMOS | Semantic Scholar
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
NMOS and PMOS breakdown characteristics. | Download Scientific Diagram
Your Mental Breakdown (v.2)
